Paulo Henrique de Oliveira Rappl

Bachelor of Physics and qualified for teaching, by the Pontifical Catholic University of São Paulo, receiving degree collation in February / 1981; in the same year, began his post-graduate studies in a master's program at the Physics Institute of São Carlos (USP), with an emphasis on the hydrodynamic simulation of forced convection in the Czochralski process, aiming the growth of high quality volumetric monocrystals. In the meantime, through a work contract, as a research assistant, joined CNPq - Instituto de Pesquisas Espaciais (Brazilian Institute for Space Research) in September 1984. With the master's degree program transfer, the dissertation was completed in 1987 at the current National Institute of Space Research, INPE, in the area of Electronics and Telecommunications / Materials. The interdisciplinarity and originality of the subject required the orientation of the researcher, Hans J. Scheel, introducer of the ACRT technique, and professor Dr. Jerzy T. Sielawa. The PhD Program in Aeronautical Engineering and Mechanics in the Materials Area, at the Instituto Tecnológico de Aeronáutica, ITA, (Technological Institute of Aeronautics) completed in 1998, turned to the interests of INPE, regarding the growth of lead and tin telluride thin films, Pb(1-x)Sn(x)Te, by molecular beam epitaxy, MBE, and the investigation of its morphological, structural and electrical properties, with the guidance of Dr. Irajá N. Bandeira.In the Associated Laboratory of Sensors and Materials, LAS / INPE, participated in the program of research and development of infrared devices, initially, in the growth of volumetric crystals of compounds IV-VI, in particular, lead telluride, PbTe; tin telluride, SnTe, and its ternary alloys, Pb(1-x)Sn(x)Te, by the Bridgman method and vapor phase transport deposition and, also, alkali metal halide by the Czochoralski method. Since 1991, the research activity has dealt with the growth of thin, epitaxial and monocrystalline, films, initially, by means of beams (IV-VI compounds) thermally collimated, HWE, and then by MBE, from 1995 onwards. In management activities, headed the LAS and, at the same time, such as a substitute, coordinated the Associated Laboratories from October / 2012 to February / 2015. Such as substitute head of the LAS, answered for two administrations: October / 2010 to October / 2012; January 2007 to March 2009.At INPE, became a public servant in December 1990; currently holds the position of senior technologist III, at the top of the federal career plan.In Physics area, has expertise in growth by MBE and electrical characterization, resistivity and Hall effect, of IV-VI compound monocrystalline epitaxial films, in particular: PbTe, SnTe, and its ternary compounds Pb(1-x)Sn(x)Te, in addition to the alloys grown with europium, Pb(1-x)Eu(x)Te. Also, has experience in the epitaxial growth of europium telluride, EuTe, and bismuth telluride, Bi2Te3. For specific purposes, these compounds can be grown in single layers or composite structures such as superlattices, wells and quantum dots.In programs of scientific improvement abroad, the following stand out:Johannes Kepler Universität Linz - Institut für Halbleiterphysik, Linz, Austria. Program RHAE / CNPq, process 460151 / 05-9 (NV), period: July 5 to August 5, 1995, under the supervision of Prof. Dr. Günther G. Bauer and follow-up of Dr. Günther Springholz, with emphasis on epitaxial growth , by MBE, of compounds IV-VI;Post-Doctorate, The University of Oklahoma, School of Electrical and Computer Engineering, Norman, USA, with support from FAPESP, process 2000 / 02415-3, period: August 2000 to August 2001, under the supervision of Dr. Patrick J. McCann. In short, the program consisted of improving the steps in the IV-VI semiconductor laser manufacturing process. In this case, the innovation involves packing the resonant cavity into metal material by removing the thermoresistive substrate and replacing it with non-crystalline material with hig (Source: Lattes Curriculum)