Heavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMOSFET

Author(s)

Alberton, S. G. ; Medina, N. H. ; Added, N. ; Aguiar, V. A. P. ; Guazzelli, M. A. ; Santos, R. B. B. ; IEEE

• Document type: Journal article
• Source: 2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS); v. N/A, p. 5-pg., 2021-01-01.

Abstract

Lackner's theory for avalanche multiplication in semiconductor devices provides physical interpretation for the model parameters and obtaining them through experimental methods is necessary. In this work, the charge collection mechanisms of heavy-ion-induced avalanche multiplication in power MOSFETs are studied based on Lackner's impact ionization model. The heavy-ion-induced impact ionization coefficients were estimated by comparing collected charge values obtained from computational simulations and experimental measurements. (AU)

• FAPESP's process: 12/03383-5 - Development of methodology for radiation tests on electronic components
• Grantee: Nilberto Heder Medina
• Support Opportunities: Regular Research Grants