Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering

Author(s)

de Oliveira, R. S. ; Folli, H. A. ; Horta, I. M. ; Damasceno, B. S. ; Augstrose, J. H. C. ; Miyakawa, W. ; Pereira, A. L. J. ; Massi, M. ; Sobrinho, A. S. da Silva ; Leite, D. M. G.

• Document type: Journal article
• Source: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS; v. 26, p. 6-pg., 2023-01-01.

Abstract

This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400 & DEG;C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and UV-vis spectrophotometry. The films have wurtzite phase with strong preferential orientation in the c-axis direction. Moreover, two clear contributions to the (0002) diffraction peak could be found, indicating the presence of two different morphologies, which were discussed in terms of the formation of an intermediate layer between the substrate and a dominating columnar-like microstructured film. (AU)

• FAPESP's process: 22/02994-2 - Green hydrogen project (ProHVer): photoelectrode study center aiming the sustainable generation of H2 fuel
• Grantee: André Luis de Jesus Pereira
• Support Opportunities: Research Grants - Initial Project
• FAPESP's process: 15/06241-5 - GaN based films and heteroestructures grown by reactive sputtering for SAW devices application
• Grantee: Douglas Marcel Gonçalves Leite
• Support Opportunities: Regular Research Grants
• FAPESP's process: 11/50773-0 - Center of excellence in physics and applications of plasmas
• Grantee: Ricardo Magnus Osório Galvão
• Support Opportunities: Research Projects - Thematic Grants