Voltage-dependent Mobility Characterization of MDMO-PPV Thin-Film Transistors for Flexible Sensor Applications

Author(s)

Cavallari, M. R. ; Albertin, K. F. ; Santos, G. ; Ramos, C. A. S. ; Pereyra, I. ; Fonseca, F. J. ; Andrade, A. M. ; Pavanello, MA ; Claeys, C ; Martino, JA

• Document type: Journal article
• Source: MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010; v. 31, n. 1, p. 8-pg., 2010-01-01.

Abstract

We complement our previous published results on MDMO-PPV thin-film transistors by treating data according to different models that consider charge transport by hopping. Devices were processed on highly-doped silicon and ITO-covered glass substrates with dielectrics such as thermal SiO2 and PECVD deposited SiOxNy. Charge carrier mobility and threshold voltage on polymeric thin-film transistors can be better estimated considering transport dependence on carrier density, Poole-Frenkel effect and interface states. Best results were achieved on HMDS-treated SiO2, but a completely new voltage-dependence is attained. These models can be employed for a better understanding of the polymeric semiconductor behavior when in a TFT-based sensor. (AU)

• FAPESP's process: 07/06064-0 - Development of a manufacturing methodology for organic thin film transistors
• Grantee: Marco Roberto Cavallari
• Support Opportunities: Scholarships in Brazil - Master