Toward high-frequency operation of spin lasers

Author(s)

Faria Junior, Paulo E. ; Xu, Gaofeng ; Lee, Jeongsu ; Gerhardt, Nils C. ; Sipahi, Guilherme M. ; Zutic, Igor

• Document type: Journal article
• Source: PHYSICAL REVIEW B; v. 92, n. 7, p. 14-pg., 2015-08-25.

Abstract

Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum-well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying a uniaxial strain, it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin lasers, which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (>200 GHz) would significantly exceed the frequency range possible in conventional lasers. (AU)

• FAPESP's process: 12/05618-0 - Spin dynamics and spin transport in reduced dimensions: from graphene to spin lasers
• Grantee: Paulo Eduardo de Faria Junior
• Support Opportunities: Scholarships in Brazil - Doctorate
• FAPESP's process: 13/23393-8 - Tailoring spin-dependent and optical properties in semiconductor nanostrucures
• Grantee: Paulo Eduardo de Faria Junior
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• FAPESP's process: 11/19333-4 - Tailoring spin and magnetism: electronic structure calculations
• Grantee: Guilherme Matos Sipahi
• Support Opportunities: Scholarships abroad - Research