Characterization of nonlinear carrier dynamics in silicon strip nanowaveguides

Author(s)

Aldaya, Ivan ; Dainese, Paulo ; Gil-Molina, Andres ; Pita, Julian L. ; Fragnito, Hugo L. ; IEEE

• Document type: Journal article
• Source: 2017 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC); v. N/A, p. 4-pg., 2017-01-01.

Abstract

Nonlinear carrier recombination dynamics is characterized in a 450 nm x 220 nm silicon nanowire by employing a time-resolved pump-and-probe experiment. Our results show that the recombination rate is faster at the early stages of the decay as compared to the final stages, in agreement with trap-assisted mechanism. We have also demonstrated that by operating at high carrier density, faster excess carrier generation and recombination can be obtained, which we have used to improve the speed of an all-optical FCA based silicon switch from about 7 to 1 ns. (AU)

• FAPESP's process: 13/20180-3 - Light scattering processes in photonic microstructures
• Grantee: Paulo Clóvis Dainese Júnior
• Support Opportunities: Research Grants - Young Investigators Grants
• FAPESP's process: 15/04113-0 - Nonlinearities in Silicon-based Waveguides
• Grantee: Ivan Aritz Aldaya Garde
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• FAPESP's process: 15/11779-4 - Plasmonic and nonlinear effects in graphene coupled to optical waveguides
• Grantee: Christiano José Santiago de Matos
• Support Opportunities: Research Projects - Thematic Grants
• FAPESP's process: 12/50259-8 - Graphene: photonics and opto-electronics: UPM-NUS collaboration
• Grantee: Antonio Helio de Castro Neto
• Support Opportunities: Research Projects - SPEC Program