| Full text | |
| Author(s): |
Lopez-Richard, Victor
;
Pradhan, Soumen
;
Castelano, Leonardo K.
;
Wengenroth Silva, Rafael Schio
;
Lipan, Ovidiu
;
Hoefling, Sven
;
Hartmann, Fabian
Total Authors: 7
|
| Document type: | Journal article |
| Source: | Journal of Applied Physics; v. 136, n. 16, p. 11-pg., 2024-10-28. |
| Abstract | |
Impedance spectroscopy is vital for material characterization and assessing electrochemical device performance. It provides real-time analysis of dynamic processes such as electrode kinetics, electrons, holes or ion transport, and interfacial or defect driven phenomena. However, the technique is sensitive to experimental conditions, introducing potential variability in results. The intricate interplay of transient effects within the realm of spectral impedance analyses introduces a layer of complexity that may impede straightforward interpretations. This demands a nuanced approach for refining analytical methodologies and ensuring the fidelity of impedance characterization once the dynamic contributions of transient ingredients cannot be disentangled from the underlying steady-state characteristics. In our study, we experimentally identify that the transient effects in a memristor device are most pronounced near an optimal frequency related to intrinsic relaxation times, with these effects diminishing as the frequency varies beyond or below this range. While inherent systematic errors impose a practical limit (accuracy floor) on achievable measurement accuracy, this paper offers qualitative and quantitative insights into how specific procedures affect this limit and how to reduce it in orders of magnitude. Only by effectively addressing these errors, we can push beyond this constraint. (AU) | |
| FAPESP's process: | 23/05436-3 - Memory emergence in nonlinear systems and nanodevices |
| Grantee: | Rafael Schio Wengenroth Silva |
| Support Opportunities: | Scholarships in Brazil - Doctorate |