| Full text | |
| Author(s): |
Campos, Warlley H.
;
Penteado, Poliana H.
;
Zanon, Julian
;
Junior, Paulo E. Faria
;
Candido, Denis R.
;
Egues, J. Carlos
Total Authors: 6
|
| Document type: | Journal article |
| Source: | PHYSICAL REVIEW B; v. 110, n. 19, p. 17-pg., 2024-11-21. |
| Abstract | |
Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the k <middle dot> p approach, here, we investigate the electronic band structure of a Na2CdSn triatomic layer and derive a low-energy 4x4 effective model consistent with all the symmetries of this material class. We obtain the effective Hamiltonian using the L & ouml;wdin perturbation theory, the folding-down technique, and the theory of invariants and determine its parameters by fitting our analytical dispersion relations to those of ab initio calculations. We then calculate the bulk topological invariants of the system and show that the Na2CdSn triatomic layer is a giant-gap (hundreds of millielectronvolts) quasi-two-dimensional DTI characterized by both spin and mirror Chern numbers - 2. In agreement with the bulk-boundary correspondence theorem, we find that a finite-width strip of Na2CdSn possesses two pairs of counterpropagating helical edge states per interface. We obtain analytical expressions for the edge state energy dispersions and wave functions, which are shown to agree with our numerical calculations. Our work opens an avenue for further studies of Na2CdSn as a potential DTI candidate with room-temperature applications in areas of technological interest, such as nanoelectronics and spintronics. (AU) | |
| FAPESP's process: | 20/00841-9 - Shubnikov-de-Haas oscillations in topological and non-topological electron systems |
| Grantee: | José Carlos Egues de Menezes |
| Support Opportunities: | Regular Research Grants |