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The Influence of Annealing on the Sb Layer in the Synthesis of [001]-Oriented Sb2Se3 Film for Photoelectrochemical Hydrogen Gas Generation

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Author(s):
Costa, Magno B. ; de Araujo, Moises A. ; Puigdollers, Joaquim ; Ortega, Pablo ; Andreu, Teresa ; Voz, Cristobal ; Saucedo, Edgardo ; Mascaro, Lucia H.
Total Authors: 8
Document type: Journal article
Source: ADVANCED FUNCTIONAL MATERIALS; v. N/A, p. 16-pg., 2025-04-17.
Abstract

This work reports a new thermal treatment approach to obtain [001]-oriented Sb2Se3 film, which consists of preliminary annealing of the Sb layer before its selenization. Among the different Sb annealing temperatures assessed, the one at 200 degrees C followed by selenization (Sb2Se3(Sb-A200)) results in a considerably high texture coefficient at the [001] direction, whereas the Sb2Se3 film obtained only by selenization of the non-annealed Sb film (Sb2Se3(Sb-NA)) features preferential orientation at the [hk0] direction. In terms of photoelectrochemical (PEC) performance for H-2 generation, the Sb2Se3(Sb-A200)/CdS/TiO2/Pt film delivers a substantial photocurrent density of -5.65 mA cm(-2) at 0 V-RHE, which is 10 times higher compared to the Sb2Se3(Sb-NA)/CdS/TiO2/Pt film. Additionally, the employment of the Sb annealing step results in stable PEC performance of the Sb2Se3 film over 7000 s, meaning that the photocorrosion is minimized. The improved PEC performance of the Sb2Se3 film is attributed to better crystallinity and composition closer to the stoichiometric condition, as well as the preferential orientation at the [001] direction that favors charger carriers' transportation. At last, the findings of this work feature an innovative thermal treatment approach to obtain [001]-oriented Sb2Se3 film to further improve H-2 generation from PEC water splitting. (AU)

FAPESP's process: 21/07727-0 - Synthesis and characterization of heterostructures based on SLG/Mo/Sb2Se3/CdS/ZnO/cocatalyst for photoelectrocatalytic applications
Grantee:Magno Barcelos Costa
Support Opportunities: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 16/12681-0 - Preparation and characterization of ternary sulfide semiconductor thin films of antimony and tin, TAS (T = tin, antimony and A = S = sulfur), for use in photovoltaic cells
Grantee:Moisés Albuquerque de Araújo
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 17/21365-8 - Electrodeposition and characterization of Sb2Se3 and MSbxSey (M = Cu, Co, Ni, or Zn) thin films for applications in the hydrogen production and CO2 reduction.
Grantee:Magno Barcelos Costa
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 17/11986-5 - Generation and storage of New Energy: bringing technological development for the country
Grantee:Ana Flávia Nogueira
Support Opportunities: Research Grants - Research Centers in Engineering Program
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC