Semiconductor Heterostructures Study

• Grant number: 95/04673-0
• Support Opportunities: Research Projects - Thematic Grants
• Start date: October 01, 1996
• End date: June 30, 2000
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Jose Antonio Brum
• Grantee: Jose Antonio Brum
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
• Associated research grant(s): 99/04432-3 - Screening effects in the spin-splitting in n-doped gaas/aigaas quantum wells., AR.EXT; 98/05040-9 - The effect of the mobile valence hole on the optical absorption of quantum wells in the presence of a two-dimensional electron gas., AR.EXT; 97/06847-0 - Carrier capture time in t-shaped semiconductor quantum wires., AR.EXT

Abstract

The project aims to develop fundamental research in semiconductor heterostructures. The work assumes a narrow collaboration between experimental and theoretical physicists as well as with crystal growers at Unicamp and other laboratories. The main goals are: a) the formation of experimentally and theoretically highly trained researchers; b) to develop the scientific and tecnological know-how in this area, with an effort to participate in the development of new kinds of semiconductor devices; c) to investigate new physical effects in semiconductors, in particular in the study of low-dimensional physics, from two-dimensional systems to one and zero-dimensional systems; and d) to collaborate in similar efforts with other experimental groups and laboratories dedicated to the growth of semiconductor crystals. All the researchers in our group will have free access to all available laboratories. An effort to use samples grown at Unicamp and other brazilian laboratories will be made. For more sophisticated samples we will involve collaborations with international laboratories. A strong collaboration with laboratories outside Brazil will be made in all aspects: theroy, characterization and experiments in general and crystal growth. The main subjects of research are: a) electronic correlation or many-body effects; b) the dynamics of carriers and excitons; c) the interaction of electromagnetic fields with the ground state and elementar excitations of semiconductors heterostructures and d) the effects of interface roughnesses in the semiconductor heterostructures. (AU)