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Optical and transport properties of semiconductor heterostructures: theory and experience

Grant number: 95/00789-3
Support Opportunities:Research Projects - Thematic Grants
Duration: July 01, 1996 - June 30, 2000
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Nelson Studart Filho
Grantee:Nelson Studart Filho
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
Associated grant(s):99/09579-2 - Alexandr Ivanovich Toropov | Institute of Semiconductors Physics/Russian Academy - Rússia, AV.EXT
99/07286-8 - I - Propagation and localization of vertically polarized plasmon-lo phonon collective excitations in doped gaas/aias superlattices. II - Resonant Raman study of the InAs/GaAs self assembled quantum dots, AR.EXT
99/04779-3 - Effect of a periodic modulation on edge magnetoplasmons in the Quantum Hall regime, AR.EXT
+ associated grants 99/04182-7 - 1) Mesoscopic quasi-1D electron transport: the correlated electron approach. 2) Magnetooptical anisotropy in the absorption coefficient of narrow-gap quantum wells. 3) Phoron blockade in the mesoscopic., AR.EXT
98/10192-2 - Oleg G. Balev | Institute of Semiconductor Physics/National Acedemy Science Ukraine - Ucrânia, AV.EXT
98/05281-6 - Raman spectroscopy of optical phonons in inas/gaas self assembled quantum dots., AR.EXT
98/06189-6 - 1) effects of intersubband coupling on friedel oscillations in quasi-two dimensional semiconductor systems. 2) polaron cyclotron resonance and phonon-assisted harmonics with interface phono...., AR.EXT
97/11269-6 - François M. Peeters | University of Antwerp - Bélgica, AV.EXT
97/02715-2 - 1) Plasmon-phonon coupling in &-doped semiconductors. 2) Enhancement of ressonant tunneling current of holes due to internal strains, AR.EXT
96/12148-5 - Alexandr Ivanovich Toropov | Institute of Semiconductor Physics - Rússia, AV.EXT - associated grants

Abstract

The research project is devoted to the investigation of optical and transport properties of semiconductor heterostructures. The potenciality of Raman spectroscopy is being explored to caractherize these structures. In this sense, the arrangements (in an atomic scale) of the interfaces in superlattices have been analyzed. The miniband formation and transport properties, as well the electron-phonon interactions, in doped superlattices are investigated. Self-organized quantum dots are being studied both by photoluminescence at 10K and second-order Raman scattering. Strain effects are also being analyzed in heterostructures and optical phonon spectra in semiconductor solid solutions have been determined. From a theoretical point of view we are studying the optical and transport properties of delta-doped layers, through a self-consistent calculation of the electronic structure of this multisubband system in order to find the transport and quantum mobility as well the coupled plasmon-phonon dispersion and the inelastic light scattering intensity. Magnetoresonant Raman scattering in zinc-blend type semiconductors and resonant tunneling of holes through double barrier devices are also some selected topics which have been studied by our group. We are also planning to use Monte Carlo and Molecular Dynamics methods to study transport properties in low-dimensional semiconductor devices. (AU)

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