| Grant number: | 95/00789-3 |
| Support Opportunities: | Research Projects - Thematic Grants |
| Start date: | July 01, 1996 |
| End date: | June 30, 2000 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Nelson Studart Filho |
| Grantee: | Nelson Studart Filho |
| Host Institution: | Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil |
| City of the host institution: | São Carlos |
| Associated research grant(s): | 99/09579-2 - Alexandr ivanovich toropov | institute of semiconductors physics/russian academy - russia,
AV.EXT 99/07286-8 - I-propagation and localization of vertically polarized plasmon-lo phonon collective excitations in doped gaas/aias superlattices. ii- resonant raman study of the inas/gaas self assembled quantum dots., AR.EXT 99/04779-3 - Effect of a periodic modulation on edge magnetoplasmons in the quantum hall regime., AR.EXT + associated grants - associated grants |
Abstract
The research project is devoted to the investigation of optical and transport properties of semiconductor heterostructures. The potenciality of Raman spectroscopy is being explored to caractherize these structures. In this sense, the arrangements (in an atomic scale) of the interfaces in superlattices have been analyzed. The miniband formation and transport properties, as well the electron-phonon interactions, in doped superlattices are investigated. Self-organized quantum dots are being studied both by photoluminescence at 10K and second-order Raman scattering. Strain effects are also being analyzed in heterostructures and optical phonon spectra in semiconductor solid solutions have been determined. From a theoretical point of view we are studying the optical and transport properties of delta-doped layers, through a self-consistent calculation of the electronic structure of this multisubband system in order to find the transport and quantum mobility as well the coupled plasmon-phonon dispersion and the inelastic light scattering intensity. Magnetoresonant Raman scattering in zinc-blend type semiconductors and resonant tunneling of holes through double barrier devices are also some selected topics which have been studied by our group. We are also planning to use Monte Carlo and Molecular Dynamics methods to study transport properties in low-dimensional semiconductor devices. (AU)
| Articles published in Agência FAPESP Newsletter about the research grant: |
| More itemsLess items |
| TITULO |
| Articles published in other media outlets ( ): |
| More itemsLess items |
| VEICULO: TITULO (DATA) |
| VEICULO: TITULO (DATA) |