Multi-user Equipment approved in grant 2023/17576-4: potentiostat/galvanostat with low current and impedance modules

• Grant number: 24/15173-2
• Support Opportunities: Multi-user Equipment Program
• Start date: December 01, 2024
• End date: November 30, 2031
• Field of knowledge: Physical Sciences and Mathematics - Chemistry - Inorganic Chemistry
• Principal Investigator: Murilo Santhiago
• Grantee: Murilo Santhiago
• Host Institution: Centro Nacional de Pesquisa em Energia e Materiais (CNPEM). Campinas , SP, Brazil
• City of the host institution: Campinas
• Associated research grant: 23/17576-4 - Controlled generation of chemical defects on the basal plane of molybdenum disulfide (MoS2), AP.R

Abstract

Monolayer molybdenum disulfide (MoS2) has shown very promising catalytic activity for the electrochemical generation of hydrogen. However, the basal plane represents the region of area in the monolayer is inert to hydrogen generation. In order to activate the basal plane, several methods have been proposed to generate defects in the form of sulfur vacancies and/or active edges on the monolayer. However, the generation of defects with high spatial resolution in the basal plane still represents a challenge due to the types of routes used, which for the most routes do not allow a fine-tuning in the defect-engineering step. In this project we aim the preparation of ultra-high aspect ratio MoS2 monolayers to generate defects with spatial resolution in the basal plane. By overcoming this challenge, it will be possible to have a better understanding of the interface in the region of the defects generated in the basal plane and how these defects impact hydrogen evolution on electrodes. To characterize the defects created with atomic resolution we propose to perform the nanofabrication process directly on suspended monolayers and characterize the samples using transmission electron microscopy. (AU)

Scientific publications

(The scientific publications listed on this page originate from the Web of Science or SciELO databases. Their authors have cited FAPESP grant or fellowship project numbers awarded to Principal Investigators or Fellowship Recipients, whether or not they are among the authors. This information is collected automatically and retrieved directly from those bibliometric databases.)

HASIMOTO, LEONARDO H.; DAS NEVES, MATHEUS F. F.; PERFECTO, TARCISIO M.; BETTINI, JEFFERSON; LEITE, EDSON R.; CAPAZ, RODRIGO B.; SANTHIAGO, MURILO. Unraveling the Defects Introduced on the Basal Plane of MoS₂ Monolayers by H₂O₂ for the Hydrogen Evolution Reaction. ACS APPLIED ENERGY MATERIALS, v. N/A, p. 9-pg., 2025-10-03. (23/15689-6, 23/17576-4, 24/00989-7, 22/14720-4, 22/00955-0, 24/15173-2)