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Ab initio calculation of the band mismatch in InP nanowires

Abstract

The artificial growth of semiconductor nanowires gives rise to the possibility of stable wurtzite compounds that present zinc blend symmetry when bulk samples are grown. More than that, the small difference in energy allows one to control the nanowire phase through growth conditions. At the same time, stacking faults are expected and carrier confinement effects will be present in the nanowire optical properties due to the band mismatch in the interface between the phases. In order to estimate the band mismatch contribution on the optical characterization of the nanowires, we will perform "ab initio" calculations of the band structure of InP wurtzite systems with stacking faults with zinc blend symmetry and vice versa. Getting in mind that experimental determination of the band mismatch at the interface between different structures is not a trivial task, we will also calculate the band structure of zinc blend InAs / InP systems with each one of the compounds determining the in-plane structural parameter. All these results are relevant for the experimental coworkers that wait for theoretical support to the experimental results. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
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Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
DACAL, LUIS C. O.; CANTARERO, A.. An ab initio study of the polytypism in InP. SCIENTIFIC REPORTS, v. 6, . (11/08513-1)