Exploring Quantum Defects in Hexagonal Boron Nitride: A DFT+DMRG Approach.
Ab initio study of the electronic and elastical properties in G-M6Ni16Si7 (M = V,...
Transport properties of molecular junctions and equivalent devices
Theoretical study of the double doping of transition metals in GaN and ZnO: alloys...
Magnetism in metallic multilayered systems using ab-initio electronic structure ca...
Victor Vitalievich Tugushev | Russian Research Centre Kurchatov Institute - Rússia