Advanced search
Start date
Betweenand

Wear-leveling techniques for PRAM memories

Grant number: 11/05266-3
Support type:Scholarships in Brazil - Master
Effective date (Start): August 01, 2011
Effective date (End): January 31, 2013
Field of knowledge:Physical Sciences and Mathematics - Computer Science - Computer Systems
Principal Investigator:Guido Costa Souza de Araújo
Grantee:Caio Hoffman
Home Institution: Instituto de Computação (IC). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

The phase-change memories bring new opportunities for the computer industry, is to create non-volatile storage devices with greater durability or is to replace DRAM because its limit of scalability. Although promising, PRAM memories nowadays need mechanisms to reduce wear. At this point wear-leveling techniques allow us to spread the wear evenly by the memory, so that increases the durability of memory as a whole. In spite of there are techniques currently used in some memories, like NAND flash, there is room for innovation and research. In this scenario we propose a technique that attempts to organize a new form the relating informations of virtual and physical addresses, allowing to create temporary bonds between them, so that each new writing in a particular virtual address the data will be located in physical different regions, preventing local wear. (AU)

Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
HOFFMAN, Caio. Analysis of wear-out of error correction techniques in phase-change memories. 2013. Master's Dissertation - Universidade Estadual de Campinas (UNICAMP). Instituto de Computação.

Please report errors in scientific publications list by writing to: cdi@fapesp.br.