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Quantum Transport in resonant tunneling devices: Interface charge accumulation

Grant number: 11/22978-7
Support Opportunities:Scholarships in Brazil - Scientific Initiation
Start date: March 01, 2012
End date: August 31, 2012
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Gilmar Eugenio Marques
Grantee:Antonio Francisco Rodrigues Cremasco
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil

Abstract

This project is guided to the preparation of a student to work in transport properties in a near future. It is intended to initiate and solidify analytical methods and knowledge for advanced numerical techniques. The candidate should calculated transmissivity and tunneling current in double-barrier systems. He will work with two models for the potential profile under applied voltage, one with 3D-2D-3D injection and another 2D-2D-3D injection which includes an analytical profile function to account for interface charge accumulation.

News published in Agência FAPESP Newsletter about the scholarship:
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