Architecture effects on electrical and morphological properties of MIS devices

• Grant number: 13/02499-2
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: May 01, 2013
• End date: December 31, 2013
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Neri Alves
• Grantee: Gabriel Leonardo Nogueira
• Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil

Abstract

This project aims to study electrical and morphological properties of poly(3-hexylthiophene) P3HT semiconducting layers and poly(methyl-phenyl silsesquioxane) PSQ as dielectric material on the development of two different MIS (Metal-Insulator-Semiconductor) capacitors architectures, named top-gate and bottom-gate devices. The different metal/semiconductor, metal/insulator, and insulator/semiconductor interfaces, that arise from each architecture, show a layer sequence dependence on the device characteristics and performance. Here, P3HT and PSQ thin films will be produced on a variety of substrates as ITO, gold, and aluminum-coated glass slides. Their morphology will be investigated through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrical impedance measurements will be used to evaluate the device's electrical behavior as a function of the different mentioned architectures, in a way to improve the current organic electronic devices. (AU)