Study of the properties of the topological insulator Bi2Te3 grown by molecular beam epitaxy

• Grant number: 16/22366-5
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• Start date: March 01, 2017
• End date: February 20, 2018
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
• Principal Investigator: Eduardo Abramof
• Grantee: Celso Israel Fornari
• Host Institution: Instituto Nacional de Pesquisas Espaciais (INPE). Ministério da Ciência, Tecnologia e Inovação (Brasil). São José dos Campos , SP, Brazil
• Associated research grant: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures, AP.TEM

Abstract

Topological insulators have received great attention of the scientific community due to its unique surface characteristics. These materials behave like conventional insulators in the bulk and have a metallic surface with unique properties, which has been investigated both for technological applications such as quantum computing and spintronics, and for basic scientific research, as in the search of the Majorana fermion. However, these topological properties are extremely sensitive to contamination on the surface, which can modify the crystalline structure leading to degradation of the topological order. Therefore, it is of utmost importance to protect these topological states from contamination in order to use their surface properties at room conditions. This project aims to investigate a protective layer to Bi2Te3 compound to protect the surface states from contamination, while preserving the topological order in the compound. In addition, we will study this topological system by doping with rare earths and by producing vertical p-n junctions. With these new structures, it is expected to suppress free carriers from the bulk, allowing direct measurements through surface channels. This post-doctoral project is included in the thematic project FAPESP Nr. 15/16191-5 and will have collaboration with the group of Experimental Physics VII of the Würzburg University in Germany. (AU)

Scientific publications

(9)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

FORNARI, CELSO I.; ABRAMOF, EDUARDO; RAPPL, PAULO H. O.; KYCIA, STEFAN W.; MORELHAO, SERGIO L.. Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. MRS ADVANCES, v. 5, n. 35-36, SI, p. 1891-1897, 2020. (18/00303-7, 16/22366-5)

MORELHAO, SERGIO L.; KYCIA, STEFAN; NETZKE, SAMUEL; FORNARI, CELSO I.; RAPPL, PAULO H. O.; ABRAMOF, EDUARDO. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, v. 112, n. 10, MAR 5 2018. (16/22366-5)

MORELHAO, SERGIO L.; KYCIA, STEFAN W.; NETZKE, SAMUEL; FORNARI, CELSO I.; RAPPL, PAULO H. O.; ABRAMOF, EDUARDO. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. Journal of Physical Chemistry C, v. 123, n. 40, p. 24818-24825, OCT 10 2019. (18/00303-7, 16/22366-5)

TCAKAEV, A.; ZABOLOTNYY, V. B.; FORNARI, I, C.; RUESSMANN, P.; PEIXOTO, T. R. F.; STIER, F.; DETTBARN, M.; KAGERER, P.; WESCHKE, E.; SCHIERLE, E.; et al. Incipient antiferromagnetism in the Eu-doped topological insulator Bi2Te3. Physical Review B, v. 102, n. 18, NOV 2 2020. (16/22366-5)

IVONE REGINA DE OLIVEIRA; GABRIELA DO VALE VIEIRA; KENNEDY WALLACE DOS SANTOS; LEANDRO JOSÉ RANIERO; LARISSA MOREIRA CASTRO-RAUCCI; PAULO TAMBASCO DE OLIVEIRA; CELSO ISRAEL FORNARI; VICTOR CARLOS PANDOLFELLI. Improving the Radiopacity of Calcium Aluminate Cement Based Blends. MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, v. 21, n. 2, 2018-01-22. (16/22366-5, 16/15032-3)

FORNARI, I, C.; RAPPL, P. H. O.; MORELHAO, S. L.; FORNARI, G.; TRAVELHO, J. S.; DE CASTRO, S.; PIRRALHO, M. J. P.; PENA, F. S.; PERES, M. L.; ABRAMOF, E.. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. MATERIALS RESEARCH EXPRESS, v. 5, n. 11, NOV 2018. (16/22366-5)

FORNARI, I, CELSO; BENTMANN, HENDRIK; MORELHAO, SERGIO L.; PEIXOTO, THIAGO R. F.; RAPPL, PAULO H. O.; TCAKAEV, ABDUL-VAKHAB; ZABOLOTNYY, VOLODYMYR; KAMP, MARTIN; LEE, TIEN-LIN; MIN, CHUL-HEE; et al. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. Journal of Physical Chemistry C, v. 124, n. 29, p. 16048-16057, JUL 23 2020. (16/22366-5, 19/01946-1)

TCAKAEV, A.; ZABOLOTNYY, V. B.; FORNARI, C., I; RUESSMANN, P.; PEIXOTO, T. R. F.; STIER, F.; DETTBARN, M.; KAGERER, P.; WESCHKE, E.; SCHIERLE, E.; et al. Incipient antiferromagnetism in the Eu-doped topological insulator Bi2Te3. PHYSICAL REVIEW B, v. 102, n. 18, p. 13-pg., 2020-11-02. (16/22366-5)

FORNARI, CELSO I.; ABRAMOF, EDUARDO; RAPPL, PAULO H. O.; KYCIA, STEFAN W.; MORELHAO, SERGIO L.. Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. MRS ADVANCES, v. 5, n. 35-36, p. 7-pg., 2020-01-01. (18/00303-7, 16/22366-5)