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Quantitative transmission electron microscopy (QHRTEM): developments and application to a study of a nanostructured semiconductor

Grant number: 07/05165-7
Support Opportunities:Scholarships in Brazil - Post-Doctoral
Start date: July 01, 2008
End date: June 30, 2010
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Antonio José Ramirez Londono
Grantee:Luciano Andrey Montoro
Host Institution: Associação Brasileira de Tecnologia de Luz Síncrotron (ABTLuS). Ministério da Ciência, Tecnologia e Inovação (Brasil). Campinas , SP, Brazil

Abstract

In this work we consider the development and application of methodologies for quantitative analysis from transmission electron microscopy images. This proposal aims in a first time the development; implementation and use of advanced techniques of focal series reconstruction for achieve high quality and free aberrations images with an increase in point-to-point resolution and accuracy of quantitative results. For quantitative studies will be implemented the geometric phase analysis (GPA), that it allow to obtain the strain tensors (Exx, Eyy), the width between adjacent atomic columns, and the local cell parameters. From this cell parameters and applying the Vegards Law, will be calculated the atomic scale chemical composition of this nanostructures. 2D and 3D chemical maps will be obtained from these results. These methodologies will be applied to study of Si1-xGex islands - a nanostructured semiconductor. The implementation of these methodologies for reconstruction and data treatment will be allow improve the performance of the transmission microscopes and make practicable to users of LME-LNLS facilities the development of studies and works with high spatial resolution (1 Å). (AU)

News published in Agência FAPESP Newsletter about the scholarship:
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Scientific publications (4)
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
MONTORO, LUCIANO A.; LEITE, MARINA S.; BIGGEMANN, DANIEL; PETERNELLA, FELLIPE G.; BATENBURG, K. JOOST; MEDEIROS-RIBEIRO, GILBERTO; RAMIREZ, ANTONIO J.. Revealing Quantitative 3D Chemical Arrangement on Ge-Si Nanostructures. Journal of Physical Chemistry C, v. 113, n. 21, p. 9018-9022, . (07/05165-7)
FIORENTINI‚ GA; LEITE‚ M.S.; PIMENTEL‚ VL; MONTORO‚ LA; RAMIREZ‚ AJ; MEDEIROS-RIBEIRO‚ G.. Reactive epitaxy of metallic hafnium silicide nanocrystals. Applied Physics Letters, v. 93, p. 013107, . (07/05165-7)
MONTORO, LUCIANO A.; LEITE, MARINA S.; BIGGEMANN, DANIEL; PETERNELLA, FELLIPE G.; BATENBURG, K. JOOST; MEDEIROS-RIBEIRO, GILBERTO; RAMIREZ, ANTONIO J.; MOECK, P; HOVMOLLER, S; NICOLOPOULOS, S; et al. Chemical Nano-Tomography of Self-Assembled Ge-Si:Si(001) Islands From Quantitative High Resolution Transmission Electron Microscopy. HYDROGEN CYCLE-GENERATION, STORAGE AND FUEL CELLS, v. 1184, p. 3-pg., . (07/05165-7)
MONTORO, LUCIANO A.; MEDEIROS-RIBEIRO, GILBERTO; RAMIREZ, ANTONIO J.. Novel Approach for High-Resolution Elastic Behavior Assessment of Alloyed Strained Nanostructures. Journal of Physical Chemistry C, v. 114, n. 29, p. 12409-12415, . (02/04151-9, 07/05165-7)