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Synthesis of nano and microstructures of InN and GaN in silicon

Grant number: 05/00495-3
Support Opportunities:Scholarships in Brazil - Scientific Initiation
Start date: October 01, 2005
End date: June 30, 2008
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Newton Cesario Frateschi
Grantee:Luis Alberto Mijam Barea
Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

We will investigate the synthesis of nano and micro structures of InN and GaN on silicon substrates by Chemical Beam Epitaxy (CBE) and subsequent nitridation by electron cyclotron resonance plasma (ECR).

News published in Agência FAPESP Newsletter about the scholarship:
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