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Characterization of Ultrathin Layers of High Dielectric Constant and Application in the Fabrication of High Performance MOS Structures

Grant number: 10/09509-5
Support type:Scholarships in Brazil - Post-Doctorate
Effective date (Start): January 01, 2011
Effective date (End): June 30, 2013
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:Sebastiao Gomes dos Santos Filho
Grantee:Danilo Roque Huanca
Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Associated research grant:08/05792-4 - Design, fabrication and characterization of FinFET transistors, AP.TEM


In this post doctorate work will be investigated ultrathin layers of Al2O3 AlSixOy, and TiSixOy TiAlxOy with high dielectric constant (k) for MOS gate with equivalent thickness in the range of 0.3 to 1nm. It will be fabricated MOS capacitors using Al2O3 AlSixOy, TiSixOy and TiAlxOy as gate dielectrics, obtained by sputtering in equipment type "RF magnetron" followed by the deposition of titanium nitride in the same chamber without breaking vacuum. It also will measure the characteristics of capacitance-voltage (CV), capacitance-time (Ct), current-voltage (IV) and physical measures such as: ellipsometry, Rutherford backscattering spectroscopy (RBS) mode resonance of oxygen and measured scattering X-ray Grazing-incidence small-angle x-ray scattering (GISAXS:.). A part of the research goal will be to study the evolution of physical and electrical characteristics of Al2O3 films, AlSixOy, and TiSixOy TiAlxOy due to heat treatments ranging from 450C to 1000C.