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| Author(s): |
Dyovani Coelho
Total Authors: 1
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| Document type: | Doctoral Thesis |
| Press: | São Carlos. |
| Institution: | Universidade de São Paulo (USP). Instituto de Química de São Carlos (IQSC/BT) |
| Defense date: | 2015-01-23 |
| Examining board members: |
Sergio Antonio Spinola Machado;
Hamilton Brandão Varela de Albuquerque;
Luiz Henrique Dall'Antonia;
Jarem Raul Garcia;
Valber de Albuquerque Pedrosa
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| Advisor: | Sergio Antonio Spinola Machado |
| Abstract | |
The underpotential deposition (UPD) have been widely used to production of semiconductor films, but not applied to search the doping of electrodeposited films. Therefore, here is discussed the use of UPD as a technique to doping selenium films. Then, it was studied the conditions to attain deposits of trigonal selenium on gold substrate (f-Se) and after its modification with Bi UPD (f-Se_Bi), Pb UPD (f-Se_Pb) and Cu UPD (f -Se_Cu). Studies using cyclic voltammetry, chronoamperometry, optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD) showed the production of a highly crystalline, homogeneous and adherent selenium film formed by hexagonal structures with microrod shape and diameters between 300 and 600 nm. However, the trigonal selenium with those features is synthezised only on the deposition into HNO3 0.1 M containing SeO2 0.02 M at 80 °C, -0.45 V (vs. SCE), under illumination with halogen lamp 100 W, irradiance of 200 mW cm-2, magnetic stirring and deposition time ≥ 600 seconds. These structures are maintained even after the UPD of the metals, which was characterized using electrochemical quartz crystal microbalance (EQCM). From massogram profile was possible to observe the occurrence of diffusion of the metals into the selenium phase, since was not verified the surface saturation of the film. Furthermore, the metals exhibited different diffusion kinetics, where the metal with higher diffusion was copper, which was the only one to show effective doping of selenium film. The optical characterization of the films determined a band gap average of 1.87 ±0,03 eV for f-Se, f-Se_Pb and f-Se_Bi, although, the f-Se_Cu presented band gap of 3.19 eV. Moreover, when it is studied the photoelectrochemical activity of the semiconductors films was noted different photocurrents between them. The f-Se_Bi produces photocurrent 3 times greater than the f-Se_Pb and 35 times higher than the other, but the pure selenium and those doped with Bi and Pb UPD present similar charge-carriers density, approximately 6.0 x1015 cm-3, while the f-Se_Cu shows an increase of 4 orders of magnitude for the same parameter. Therefore, the high photocurrent to f-Se_Bi is associated with the minimization of charge recombination at semiconductor-electrolyte interface, while the low photocurrent exhibited by f-Se_Cu is due to the higher energy band gap of the film. Anyway, the doping of the semiconductor film with the UPD proved to be a simple and inexpensive way to doping relatively thick films. (AU) | |
| FAPESP's process: | 11/07022-4 - Use of underpotential deposition in the dopping of electrodeposited selenium semiconductive films. |
| Grantee: | Dyovani Coelho |
| Support Opportunities: | Scholarships in Brazil - Doctorate |