Growth and characterization of self-assembled InAs quantum dots doped with manganese
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Author(s): |
Marcelo Jacob da Silva
Total Authors: 1
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Document type: | Master's Dissertation |
Press: | São Paulo. |
Institution: | Universidade de São Paulo (USP). Instituto de Física (IF/SBI) |
Defense date: | 1999-12-20 |
Advisor: | Alain Andre Quivy |
Abstract | |
In this work, we studied the evolution of InAs quantum dots grown by MBE as a function o f the amount o f material deposited. The monitoring o f the quantum-dot prope1ties during their evolution was possible because of the growth of a sample in which the thickness o f material was varied continuously on its area. The structure o f the samples used in this work consists oftwo quantmn-dot layers, one on the samples\' surface and the other between GaAs barriers. The first quantum-dot layer was used in the morphological characterization, through AFM images, and the second one was probed by photoluminescense measurements. Moreover, the structure includes an InxGa1_xAs quantum well to be used as a reference. The possibility of carrying out optical and morphological measurements on the same sample provided us with a way to make comparisons between the topographical and optical features, yielding some interesting results, as the dependence of the optical emission with the surface quantum-dot coverage and its degradation when the islands density is higher than 1 ÜÜÜJ.Lm-2 (AU) |