Effect of surfactants on the electrodeposition of gallium in KOH media 5.0 moll -1 and NaOH 5 moll -1

Author(s)

Karen Segala

• Document type: Master's Dissertation
• Press: São Paulo.
• Institution: Universidade de São Paulo (USP). Conjunto das Químicas (IQ e FCF) (CQ/DBDCQ)
• Defense date: 2003-04-28

Examining board members

Silvia Maria Leite Agostinho; Laurindo de Salles Leal Filho; Lucia Helena Mascaro Sales

• Advisor: Silvia Maria Leite Agostinho

Abstract

Gallium electrodeposition on copper in 5.0 molL-1 KOH and 5.0 molL-1 NaOH solutions containing 5.0 mmolL-1 gallate ions, has been studied in the presence of twelve carbon atoms surfactants. Three anionic surfactants have been studied - sodium dodecyl sulfate (SDS), sodium dodecyl benzenosulfonate (SDBS) and potassium laurate (LK), and one cationic surfactant - dodecyl ammonium chloride (DAC) at concentrations above the c.m.c. The experiments have been made using rotating disk copper electrode (rotation frequency equal to 1000 rpm), using deaerated alkaline solutions at 25 ºC. Electrochemical techniques as linear voltammetry and chronoamperometry were used. Surface analysis after electrodeposition was made using scanning electron microscopy (SEM) and energy dispersion spectroscopy (EDS). All of the amphiphilics studied change the rate of the simultaneous cathodic Ga(III)/Ga and H2O/H2 processes. The inhibitive or catalytic reation depends on both the applied potencial and surfactant nature. Anionic surfactants inhibit the H2O/H2 reaction at lower overvoltages. It can be admitted under these conditions a lower number of adsorved water molecules due to the simultaneous adsorption of amphiphilic molecules. At higher cathodic overvoltages the H2O/H2 reaction is catalised by these surfactants. It can be admitted under these conditions that these molecules remove the hydrogen molecules from the electrode surface. DAC, a cationic surfactant, inhibits the reaction H2O/H2 on the entire range of cathodic overvoltages studied. Its adsorption can be attributed to the electrostatic interaction amphiphilic-electrode and in consequence, the inhibitive effect increases as the potencial attains more negative values. SDBS inhibits the gallium electrodeposition but the deposit is brighter with added SDBS. Recently prepared SDS solutions inhibits Ga(III)/Ga reaction. The presence of dodecanol (SDS hydrolise product in these media) increases the gallium electrodeposition yield from 12% to 18% at -1,35V/(Hg/HgO). At this same potencial DAC increases the yield of the process, similarly, but it inhibits the same reaction on the potencial range where the H2O/H2 reaction is significative. LK inhibits the gallium electrodeposition process on the entire range of potencials studied. This result can be attribuited to laurate gallium complex formation. SEM and EDS analyses have confirmed the best electrodeposition performance in the presence of SDS+DOH. The gallium deposits obtained at -1,55V/(Hg/HgO) spread on the entire copper surface. The radial chemical analysis has shown that either in the absence either in the presence of SDS+DOH mix gallium distribution is practically constant and uniform, except on the edge of the copper disk electrode. (AU)