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Study of III-V piezoelectric materials obtained by reactive sputtering for sensors and MEMS applications.

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Author(s):
Marcus Vinícius Pelegrini
Total Authors: 1
Document type: Master's Dissertation
Press: São Paulo.
Institution: Universidade de São Paulo (USP). Escola Politécnica (EP/BC)
Defense date:
Examining board members:
Inés Pereyra; Sérgio Luiz Morelhão; Roberto Koji Onmori
Advisor: Inés Pereyra
Abstract

I present a study on the production and physicochemical characterization of aluminum nitride thin films (AlN) obtained by r.f. reactive magnetron sputtering, using a target of pure aluminum. Since AlN is a material that presents piezoelectricity and compatibility with MOS technology, the main objective of this work is to define the process parameters that will result in a material with properties suitable for its use as an actuator / sensor in micro electromechanical systems (MEMS). The process parameters influence study was performed in three steps. First I conducted a preliminary study on pressure process and rf power influence. In the second step was studied the influence of the reactive (N2) and sputtering (Ar) gas ratio on the material physical and chemical properties. Last but not least, I studied the temperature deposition effects in the AlN thin film obtained in the gas ratio which presented the most favorable properties for MEMS applications. Properties such as refractive index, chemical composition and residual stress did not show considerable variations with changing in the atmosphere deposition, however X-ray diffraction results showed films obtained with 30% N2 have higher crystallization in (002) direction, which is the one with greater piezoelectricity response and thus, more favorable to be used as sensor / actuator in MEMS fabrication. The study on deposition temperature effects has shown maximum (002) crystallization direction is achieved in films grown at 250° C. Piezoelectric coefficient was defined using parallel plate capacitors method using AlN as dielectric resulted in a d33 piezoelectric coefficient of 0,5 pm/V. (AU)

FAPESP's process: 08/07111-4 - "Study of piezoelectric materials from the III-V family obtained by reactive sputtering"
Grantee:Marcus Vinicius Pelegrini
Support Opportunities: Scholarships in Brazil - Master