Study and applications of oxysulphide sensitive films

Author(s)

Alessandra Carla Mendes

• Document type: Master's Dissertation
• Press: São Carlos.
• Institution: Universidade de São Paulo (USP). Instituto de Física de São Carlos (IFSC/BT)
• Defense date: 2008-07-25

Examining board members

Maximo Siu Li; Jean Claude MPeko; Sidney José Lima Ribeiro

• Advisor: Maximo Siu Li

Abstract

Photoexpansion and photobleaching effects were observed in 90% GeS2 + 10% Ga2O3 films. The films were deposited onto borosilicate substrates by electron beam evaporation technique. From transmission spectra, their bandgap energy, refractive index and thickness were determined by different analysis methods. To evaluate the photoinduced effects and find the optimal conditions to get the largest photoexpansion, the samples were exposed above bandgap light (~ 351 nm), varying power density (7.1- 47.2 mW/mm2), exposure time (30 120 min) and film thickness (0.37 4.80 m). The exposed areas were analyzed using profilemeter and photoexpansions from 0.03 to 0.16 m were obtained, whose maximum value was found for a 1.80 m thick film after 24.3 mW/mm2 illumination during 120 min. Fractional expansion (_V/V) from 8% to 30% was obtained and optical absorption edge measurements revealed a blue shift after illumination. This photobleaching was accompanied by a decrease in refractive index, as measured with the prism-coupling technique. The results reveal the influence of incorporated oxygen in the glass matrix when compared with Ga10Ge25S65 [1]. The chemical compositions were measured using an energy dispersive analyzer (EDX) and no significant difference could be observed between the compositions of illuminated and nonilluminated samples. So, we supposed that the photoinduced changes are caused by photostructural changes as well observed with Raman-scattering measurements in HH and HV configurations. The dependence of Raman spectra with the polarization of the light, observed in illuminated and non-illuminated films, is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. As application of the induced phenomenon, photoexpansion effect has been used to produce diffraction gratings. Atomic microscopy images and diffraction efficiency data indicate that photoexpansion leads to relief gating on the glass surface. (AU)