Abstract
In this research project, a detailed study of the gas sensor performance of field-effect transistor (FET) devices based on 1D semiconducting nanostructures is proposed. For this, different stoichiometries of tin oxide (SnO2, SnO and Sn3O4) and copper oxide (CuO and Cu2O) nanostructures will be used as channel/sensor elements in order to understand the influence of electrical signal modula…