Advances in nanostructured semiconducting oxides for gas sensors
| Grant number: | 16/20808-0 |
| Support type: | Scholarships in Brazil - Post-Doctorate |
| Effective date (Start): | July 01, 2017 |
| Effective date (End): | September 04, 2019 |
| Field of knowledge: | Engineering - Materials and Metallurgical Engineering |
| Cooperation agreement: | Coordination of Improvement of Higher Education Personnel (CAPES) |
| Principal Investigator: | Marcelo Ornaghi Orlandi |
| Grantee: | Pedro Henrique Suman |
| Home Institution: | Instituto de Química (IQ). Universidade Estadual Paulista (UNESP). Campus de Araraquara. Araraquara , SP, Brazil |
| Associated research grant: | 13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID |
Abstract In this research project, a detailed study of the gas sensor performance of field-effect transistor (FET) devices based on 1D semiconducting nanostructures is proposed. For this, different stoichiometries of tin oxide (SnO2, SnO and Sn3O4) and copper oxide (CuO and Cu2O) nanostructures will be used as channel/sensor elements in order to understand the influence of electrical signal modulation on their gas sensor response. The materials will be synthesized by the carbothermal reduction method and characterized by X-ray diffraction (XRD), high-resolution scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Reactive sputtering and dual-beam microscopy (focused ion beam, FIB) will be used to assemble FET devices composed only of (a) an n-channel, (b) a p-channel and (c) a p-n-channel (formed by the intersection of two crossed nanostructures). Typical transistor measurements will be performed to test the assembly efficiency and determine key electrical parameters. Gas sensor response of the FET devices will be analyzed after exposure to low concentrations (in ppm range) of oxidizing and reducing gases in different operating temperatures. The major challenge of this work will be to build and characterize a "3-in-1" gas sensor FET device with a special design that allows simultaneous study of the sensor properties of each channel (p-channel, n-channel and p-n-channel) independently in a single device. The focus will be to understand how to optimize gas sensor performance that, if successful, could enable the development of high performance gas sensor devices with great potential for future technological applications within the nanotechnology field. (AU) | |