CV Lattes
Ministério da Defesa (Brasil). Instituto Tecnológico de Aeronáutica (ITA). Divisão de Ciências Fundamentais (IEF) (Institutional affiliation from the last research proposal) Birthplace: Brazil
Daniel de Oliveira Gonçalves in research grants and scholarships supported by FAPESP.
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The quality of silicon oxide layers is fundamental for the good performance of semiconductor devices. Thermal oxidation is the most used method for growth of SiO2. In this work, an oxidation furnace will be used to produce to produce silicon oxide. Silicon samples will be exposed to oxygen atmosphere varying the following parameters: temperatures (from 850 to 1110ºC), the treatment time …
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