Abstract
In this post doctorate work will be investigated ultrathin layers of Al2O3 AlSixOy, and TiSixOy TiAlxOy with high dielectric constant (k) for MOS gate with equivalent thickness in the range of 0.3 to 1nm. It will be fabricated MOS capacitors using Al2O3 AlSixOy, TiSixOy and TiAlxOy as gate dielectrics, obtained by sputtering in equipment type "RF magnetron" followed by the deposition of t…