| Full text | |
| Author(s): |
Total Authors: 4
|
| Affiliation: | [1] UTFPR, BR-85503390 Pato Branco - Brazil
[2] Univ Fed Sao Carlos, DQ, LIEC, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Kiel, Inst Mat Sci, D-24143 Kiel - Germany
Total Affiliations: 3
|
| Document type: | Journal article |
| Source: | CURRENT NANOSCIENCE; v. 11, n. 3, p. 263-270, 2015. |
| Web of Science Citations: | 1 |
| Abstract | |
Sparks are frequently observed during dielectric breakdown on valve metal oxide films, and several papers investigated their correlation with the oxide crystallization. In this work, the effect of high temperature of a spark was studied using finite element method. An important result is that the oxide area heated above the oxide fusion temperature is more than 50 times larger than the diameter of the channel generated during the breakdown event, meaning that just a few numbers of sparks could lead to a large area of oxide crystallization. Besides, the heated area is proportional to the spark temperature and to the oxide thickness. Finally, using a factorial design, a cross effect was also detected between the channel temperature and the barrier oxide thickness. (AU) | |
| FAPESP's process: | 08/00180-0 - Investigation of the growth mechanism of porous TiO2 films prepared by galvanostatic anodization |
| Grantee: | Mariana de Souza Sikora |
| Support Opportunities: | Scholarships in Brazil - Doctorate (Direct) |