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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Electrophoretic deposition of (Zn, Nb)SnO2-films varistor superficially modified with Cr3+

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Mascarenhas Morandi Lustosa, Glauco Meireles [1] ; de Campos da Costa, Joao Paulo [2] ; Perazolli, Leinig Antonio [1] ; Stojanovic, Biljana D. [3] ; Zaghete, Maria Aparecida [1]
Total Authors: 5
[1] UNESP, Inst Quim, LIEC, BR-14800060 Araraquara, SP - Brazil
[2] Ctr Univ Araraquara UNIARA, Araraquara, SP - Brazil
[3] Univ Belgrade, Inst Multidisciplinary Res, Belgrade - Serbia
Total Affiliations: 3
Document type: Journal article
Source: Journal of the European Ceramic Society; v. 35, n. 7, p. 2083-2089, JUL 2015.
Web of Science Citations: 10

Recently, there has been an important rise in the research and development aimed to improve the properties of SnO2-based varistors. Meanwhile, due to fact that ZnO-based varistors possess better electrical properties compared to SnO2-based varistors, it is shown that it is needful to add additives to improve their properties. In our study, the SnO2-powder was prepared by the chemical route (Pechini method) with addition of ZnO (1 mol%) and Nb2O5 (0.05 mol%). Films were obtained by the electrophoretic deposition of SnO2-based powder, following by microwave oven sintering. Cr3+ was deposited by EPD on the films surface and thermal treatment was carried out in a microwave oven. After electrical characterization the films showed nonlinear coefficient over 10, breakdown voltage around 60 V, low leakage current (approximate to 10(-6) A) and resistance over 200 kg cm. This indicates the efficiency of the used techniques to prepare varistor films with improved electrical properties after Cr3+ diffusion. (C) 2015 Elsevier Ltd. All rights reserved. (AU)

FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC