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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Potential Barrier of (Zn,Nb)SnO2-Films Induced by Microwave Thermal Diffusion of Cr3+ for Low-Voltage Varistor

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Lustosa, Glauco M. M. M. [1] ; de Campos da Costa, Joao Paulo [2] ; Perazolli, Leinig A. [1] ; Stojanovic, Biljana D. [3] ; Zaghete, Maria Aparecida [1]
Total Authors: 5
[1] UNESP, Inst Quim, Araraquara, SP - Brazil
[2] Ctr Univ Araraquara UNIARA, Araraquara, SP - Brazil
[3] Univ Belgrade, Inst Multidisciplinary Res, Belgrade - Serbia
Total Affiliations: 3
Document type: Journal article
Source: Journal of the American Ceramic Society; v. 99, n. 1, p. 152-157, JAN 2016.
Web of Science Citations: 6

The effect of Cr3+ on the electrical properties of SnO2-based films deposited by electrophoresis on Si/Pt substrate was considered. The films were sintered in a microwave oven at 1000 degrees C/40min and then the surface was modified with deposition of Cr3+ ions by electrophoresis. The diffusion of Cr3+ contributes to the modification of the potential barrier formed on the grain boundary improving the electrical properties due to electron acceptor species adsorption on the grain boundary. The influence on the properties of grain boundary was verified by I versus V characterization in as a function of temperature. The films showed nonlinear coefficient over 9, potential barrier height over 0.5eV and resistivity greater than 10(7)cm. 4 samples were prepared at same conditions and presented similar electrical behavior, showing the efficiency of technique on reproducibility to varistor properties control. Thereby the nonlinear coefficient increases while decreasing the conductivity of the system is noticed. (AU)

FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC