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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Anomalous temperature behavior of resistance in C1-xCox thin films grown by pulsed laser deposition technique

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Author(s):
Sergeenkov, S. [1, 2] ; Cordova, C. [2] ; Cichetto, Jr., L. [3, 2, 4] ; de Lima, O. F. [5] ; Longo, E. [3, 4] ; Araujo-Moreira, F. M. [2]
Total Authors: 6
Affiliation:
[1] Univ Fed Paraiba, CCEN, Dept Phys, BR-58051970 Joao Pessoa, PB - Brazil
[2] Univ Fed Sao Carlos, Dept Phys, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Fed Sao Carlos, Dept Chem, LIEC, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Estadual Paulista, UNESP, Inst Chem, BR-14801907 Araraquara, SP - Brazil
[5] Univ Estadual Campinas, Inst Phys Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
Total Affiliations: 5
Document type: Journal article
Source: Journal of Alloys and Compounds; v. 667, p. 18-22, MAY 15 2016.
Web of Science Citations: 2
Abstract

We study the transport properties of C1-xCox thin films (with x = 0.1, 0.15 and 0.2) grown on Si substrate by pulsed laser deposition technique. The results demonstrate some anomalous effects in the behavior of the measured resistance R(T,x). More specifically, for 0 < T< T{*} range (with T{*} similar or equal to 220 K) the resistance is shown to be well fitted by a small polaron hopping scenario with R-h(T,x) proportional to exp[{[}T-0(x)/T](0.5)] and a characteristic temperature T-0(x) similar or equal to T-0(0)(1 - x) (with T-0(0) = 120 K). While for higher temperatures T{*} <T < T-C(x), the resistance is found to be linearly dependent on spontaneous magnetization M(T,x), viz. R-M(T,x)proportional to M(T,x), following the pattern dictated by electron scattering on cobalt atoms formed robust ferromagnetic structure with the Curie temperature T-C(x) obeying a percolation like law T-C(x)similar or equal to T-C(x(m))(x/x(m))(0.15) with T-C(x(m)) = 295 K and the maximum zero-temperature magnetization reaching M(0, x(m))=0.5 mu(B) per Co atom for x(m) = 0.2. (c) 2016 Elsevier B.V. All rights reserved. (AU)

FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 14/01371-5 - Obtention of memories with LaNiO3 and LaNiO3/BaTiO3 using PLD
Grantee:Leonélio Cichetto Junior
Support type: Scholarships in Brazil - Post-Doctorate