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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Intralayer and interlayer electron-phonon interactions in twisted graphene heterostructures

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Eliel, G. S. N. [1] ; Moutinho, M. V. O. [2, 3] ; Gadelha, A. C. [1] ; Righi, A. [1] ; Campos, L. C. [1] ; Ribeiro, H. B. [4] ; Chiu, Po-Wen [5] ; Watanabe, K. [6] ; Taniguchi, T. [6] ; Puech, P. [7] ; Paillet, M. [8] ; Michel, T. [8] ; Venezuela, P. [2] ; Pimenta, M. A. [1]
Total Authors: 14
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG - Brazil
[2] Univ Fed Fluminense, Inst Fis, BR-24210346 Niteroi, RJ - Brazil
[3] Nucleo Multidisciplinar Pesquisas Comp NUMPEX COM, BR-25245390 Duque De Caxias, RJ - Brazil
[4] Univ Prebiteriana Mackenzie, MackGraphe Graphene & Nanomat Res Ctr, BR-01302907 Sao Paulo - Brazil
[5] Natl Tsing Hua Univ, Hsinchu 30013 - Taiwan
[6] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044 - Japan
[7] Univ Toulouse, CNRS, CEMES, F-31055 Toulouse - France
[8] Univ Montpellier, CNRS, Lab Charles Coulomb, F-34095 Montpellier - France
Total Affiliations: 8
Document type: Journal article
Source: NATURE COMMUNICATIONS; v. 9, MAR 23 2018.
Web of Science Citations: 8

The understanding of interactions between electrons and phonons in atomically thin heterostructures is crucial for the engineering of novel two-dimensional devices. Electron-phonon (el-ph) interactions in layered materials can occur involving electrons in the same layer or in different layers. Here we report on the possibility of distinguishing intralayer and interlayer el-ph interactions in samples of twisted bilayer graphene and of probing the intralayer process in graphene/h-BN by using Raman spectroscopy. In the intralayer process, the el-ph scattering occurs in a single graphene layer and the other layer (graphene or h-BN) imposes a periodic potential that backscatters the excited electron, whereas for the interlayer process the el-ph scattering occurs between states in the Dirac cones of adjacent graphene layers. Our methodology of using Raman spectroscopy to probe different types of el-ph interactions can be extended to study any kind of graphene-based heterostructure. (AU)

FAPESP's process: 12/50259-8 - Graphene: photonics and opto-electronics: UPM-NUS collaboration
Grantee:Antônio Hélio de Castro Neto
Support type: Research Projects - SPEC Program