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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Fourier transform spectrometer on silicon with thermo-optic non-linearity and dispersion correction

Full text
Author(s):
Souza, Mario C. M. M. [1] ; Grieco, Andrew [2] ; Frateschi, Newton C. [1] ; Fainman, Yeshaiahu [2]
Total Authors: 4
Affiliation:
[1] Univ Estadual Campinas, Gleb Wataghin Phys Inst, BR-13083970 Campinas, SP - Brazil
[2] Univ Calif San Diego, Dept Elect & Comp Engn, 9500 Gilman Dr, San Diego, CA 92023 - USA
Total Affiliations: 2
Document type: Journal article
Source: NATURE COMMUNICATIONS; v. 9, FEB 14 2018.
Web of Science Citations: 25
Abstract

Miniaturized integrated spectrometers will have unprecedented impact on applications ranging from unmanned aerial vehicles to mobile phones, and silicon photonics promises to deliver compact, cost-effective devices. Mirroring its ubiquitous free-space counterpart, a silicon photonics-based Fourier transform spectrometer (Si-FTS) can bring broadband operation and fine resolution to the chip scale. Here we present the modeling and experimental demonstration of a thermally tuned Si-FTS accounting for dispersion, thermo-optic non-linearity, and thermal expansion. We show how these effects modify the relation between the spectrum and interferogram of a light source and we develop a quantitative correction procedure through calibration with a tunable laser. We retrieve a broadband spectrum (7 THz around 193.4 THz with 0.38-THz resolution consuming 2.5W per heater) and demonstrate the Si-FTS resilience to fabrication variations - a major advantage for large-scale manufacturing. Providing design flexibility and robustness, the Si-FTS is poised to become a fundamental building block for on-chip spectroscopy. (AU)

FAPESP's process: 14/04748-2 - Coupled microresonators applied to signal processing and photonics integration
Grantee:Mário César Mendes Machado de Souza
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 15/20525-6 - Active devices exploiting capacitively-inducedc free-carrier effects in silicon waveguides
Grantee:Mário César Mendes Machado de Souza
Support Opportunities: Scholarships abroad - Research Internship - Doctorate