Coalescence growth mechanism of inserted tin dioxide belts in polycrystalline SnO2-based ceramics

Author(s)

Masteghin, Mateus G. ^[1] ; Bertinotti, Rafael C. ^[1] ; Orlandi, Marcelo O. ^[1]

Affiliation

^[1] Sao Paulo State Univ, Inst Chem, Sao Paulo - Brazil

• Document type: Journal article
• Source: MATERIALS CHARACTERIZATION; v. 142, p. 289-294, AUG 2018.
• Web of Science Citations: 1

Abstract

SnO2-based varistors have been considered promising technological devices. However their practical application is usually stated as limited to high voltage circuits based on the high breakdown electric field exhibited by these ceramics. Recently, authors have shown that the insertion of one-dimensional (1D) SnO2 belts allows overcoming this limitation. In this work, we present a detailed study of the growth mechanism of the belts inside varistors using electron microscopy techniques. We were able to show that mass transport has an intrinsic dependence on the sintering time and requires similar crystalline structure between the belts and the matrix. Dual beam and high-resolution transmission electron microscopy techniques permitted determining that 3D growth of belts occurs by coalescence. (AU)

• FAPESP's process: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
• Grantee: Marcelo Ornaghi Orlandi
• Support Opportunities: Regular Research Grants
• FAPESP's process: 15/21033-0 - Comparison of the gas sensor response of devices with single and multiple tin oxide nanobelts
• Grantee: Mateus Gallucci Masteghin
• Support Opportunities: Scholarships in Brazil - Master
• FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
• Grantee: Elson Longo da Silva
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC