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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Coalescence growth mechanism of inserted tin dioxide belts in polycrystalline SnO2-based ceramics

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Masteghin, Mateus G. [1] ; Bertinotti, Rafael C. [1] ; Orlandi, Marcelo O. [1]
Total Authors: 3
[1] Sao Paulo State Univ, Inst Chem, Sao Paulo - Brazil
Total Affiliations: 1
Document type: Journal article
Source: MATERIALS CHARACTERIZATION; v. 142, p. 289-294, AUG 2018.
Web of Science Citations: 0

SnO2-based varistors have been considered promising technological devices. However their practical application is usually stated as limited to high voltage circuits based on the high breakdown electric field exhibited by these ceramics. Recently, authors have shown that the insertion of one-dimensional (1D) SnO2 belts allows overcoming this limitation. In this work, we present a detailed study of the growth mechanism of the belts inside varistors using electron microscopy techniques. We were able to show that mass transport has an intrinsic dependence on the sintering time and requires similar crystalline structure between the belts and the matrix. Dual beam and high-resolution transmission electron microscopy techniques permitted determining that 3D growth of belts occurs by coalescence. (AU)

FAPESP's process: 15/21033-0 - Comparison of the gas sensor response of devices with single and multiple tin oxide nanobelts
Grantee:Mateus Gallucci Masteghin
Support type: Scholarships in Brazil - Master
FAPESP's process: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
Grantee:Marcelo Ornaghi Orlandi
Support type: Regular Research Grants
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC