| Full text | |
| Author(s): |
de Souza Filho, Edvan Almeida
[1]
;
Pieretti, Eurico Felix
[1]
;
Bento, Rodrigo Teixeira
[1]
;
Pillis, Marina Fuser
[1]
Total Authors: 4
|
| Affiliation: | [1] Nucl & Energy Res Inst CCTM IPEN CNEN, Mat Sci & Technol Ctr, Sao Paulo - Brazil
Total Affiliations: 1
|
| Document type: | Journal article |
| Source: | JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T; v. 9, n. 1, p. 922-934, JAN-FEB 2020. |
| Web of Science Citations: | 0 |
| Abstract | |
TiO2 and N-doped TiO2 films were grown on AISI 316 stainless steel substrates and on Si (100) by metallorganic chemical vapor deposition (MOCVD) at 400 degrees C and 500 degrees C. X-ray photoelectron spectroscopy, scanning electron microscopy, and contact angle techniques were used to characterize de films. The corrosion behavior was assessed by monitoring the open circuit potential, electrochemical impedance spectroscopy and potentiodynamic polarization tests in 3.5 wt% NaCl solution at room temperature. The results show that 6.18 at% of nitrogen was introduced in the films grown at 400 degrees C and 8.23 at% at 500 degrees C, and that besides TiO2, nitrogen phases were identified. All the films are hydrophilic and the contact angles varied from 48 degrees to 72 degrees. The films presented good homogeneity, low porosity and rounded grains in the range of 40-90 nm. The RMS roughness varied between 5.5 and 18.5 nm. Titanium dioxide films grown at 400 degrees C showed better corrosion resistance than those grown at 500 degrees C due to its compact morphology. Nitrogen-doping was not efficient to protect the substrate from corrosion. (C) 2019 The Authors. Published by Elsevier B.V. (AU) | |