| Full text | |
| Author(s): |
Total Authors: 4
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| Affiliation: | [1] Inst Tecnol Aeronaut ITA, Grp Mat Semicond & Nanotecnol GMSN, BR-12228900 Sao Jose Dos Campos, SP - Brazil
Total Affiliations: 1
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| Document type: | Journal article |
| Source: | Journal of Physical Chemistry C; v. 124, n. 34, p. 18390-18400, AUG 27 2020. |
| Web of Science Citations: | 0 |
| Abstract | |
Halide perovskite compounds emerged recently as great candidates for efficient photovoltaics, although huge technical obstacles still have to be overcome. Additionally, their accurate theoretical description is difficult to be reached due to the high level of complexity of this class of materials. In this work, we provide a vast panorama of electronic properties, correlated with its relaxed internal geometry, for a group of 48 ABX(3) cubic halide perovskites (A = CH3NH3, CH(NH2)(2), Cs, Rb; B = Pb, Sn, Ge, Si; X = I, Br, Cl). Including the DFT-1/2 approximated quasiparticle and spin-orbit corrections, our model results in band gaps with an impressive agreement with experiments, comparable with the expensive state-of-the-art GW method. We provide trends in electronic properties depending on different atoms exchanged, concluding that 16 materials present band gaps more suitable for solar cell applications. Besides, the formation of BX3 units is observed in hybrid Sn, Ge, and Si perovskites, resulting from the distortion of the inorganic lattice. We elucidate the significant band gap broadening due to this segregation using orbital overlap considerations, which is consistent with previous experimental findings. Finally, the presented method establishes a reliable low-cost approach, being especially useful for more sophisticated perovskite systems as heterostructures, alloys, and low symmetric compounds. (AU) | |
| FAPESP's process: | 06/05858-0 - Theoretical study of semiconductor alloys for applications in spintronics and optoelectronics |
| Grantee: | Lara Kühl Teles |
| Support Opportunities: | Research Grants - Young Investigators Grants |