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Tip-Induced and Electrical Control of the Photoluminescence Yield of Monolayer WS2

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Author(s):
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Pena Roman, Ricardo Javier ; Bretel, Remi ; Pommier, Delphine ; Lopez, Luis Enrique Parra ; Lorchat, Etienne ; Boer-Duchemin, Elizabeth ; Dujardin, Gerald ; Borisov, Andrei G. ; Zagonel, Luiz Fernando ; Schull, Guillaume ; Berciaud, Stephane ; Le Moal, Eric
Total Authors: 12
Document type: Journal article
Source: Nano Letters; v. 22, n. 23, p. 8-pg., 2022-12-14.
Abstract

The photoluminescence (PL) of monolayer tungsten disulfide (WS2) is locally and electrically controlled using the nonplasmonic tip and tunneling current of a scanning tunneling microscope (STM). The spatial and spectral distribution of the emitted light is determined using an optical microscope. When the STM tip is engaged, short-range PL quenching due to near-field electromagnetic effects is present, independent of the sign and value of the bias voltage applied to the tip-sample tunneling junction. In addition, a bias-voltage-dependent long-range PL quenching is measured when the sample is positively biased. We explain these observations by considering the native n-doping of monolayer WS2 and the charge carrier density gradients induced by electron tunneling in micrometer-scale areas around the tip position. The combination of wide-field PL microscopy and charge carrier injection using an STM opens up new ways to explore the interplay between excitons and charge carriers in two-dimensional semiconductors. (AU)

FAPESP's process: 20/12480-0 - Single-photon emission from point defects and substrate-induced hot spots in two-dimensional semiconductors: a scanning tunnelling microscopy-induced luminescence study
Grantee:Ricardo Javier Peña Román
Support Opportunities: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 14/23399-9 - Heterostructures in semiconducting nanowires: nanometric light emitters studied by scanning tunnelling microscopy
Grantee:Luiz Fernando Zagonel
Support Opportunities: Research Grants - Young Investigators Grants
FAPESP's process: 18/08543-7 - Light emission by individual defects in 2D materials
Grantee:Ricardo Javier Peña Román
Support Opportunities: Scholarships in Brazil - Doctorate