| Full text | |
| Author(s): |
Braga, O. M.
;
Delfino, C. A.
;
Kawabata, R. M. S.
;
Pinto, L. D.
;
Vieira, G. S.
;
Pires, M. P.
;
Souza, P. L.
;
Marega, E.
;
Carlin, J. A.
;
Krishna, S.
Total Authors: 10
|
| Document type: | Journal article |
| Source: | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING; v. 154, p. 7-pg., 2023-02-01. |
| Abstract | |
The viability of epitaxial regrowth of InP to passivate lateral mesa surfaces of lattice-matched InGaAs/InP photodiodes is investigated. The effect of the passivation is quantified via a proposed method that uses multi-wavelength photoluminescence to determine the surface recombination velocity (SRV). The effective minority charge lateral diffusion length is also obtained using photocurrent measurements with flood illumination. We propose a methodology where this data can be used together with the SRV to estimate the absorber layer minority charge lifetime. A surface recombination velocity of (3.7 +/- 0.1) x 10(4) cms(-1) was found for the InGaAs/ regrown InP interface, which represents a reduction of 2 orders of magnitude when compared to the value of (6.3 +/- 0.1) x 10(6) cms(-1) obtained for an unpassivated InGaAs surface. (AU) | |
| FAPESP's process: | 16/05516-3 - Development of fabrication process of focal plane arrays |
| Grantee: | Gustavo Soares Vieira |
| Support Opportunities: | Scholarships abroad - Research |