| Full text | |
| Author(s): |
Vilas Boas, Alexis C.
;
de Melo, M. A. A.
;
Santos, R. B. B.
;
Giacomini, R. C.
;
Medina, N. H.
;
Seixas, L. E.
;
Palomo, F. R.
;
Guazzelli, Marcilei A.
;
IEEE
Total Authors: 9
|
| Document type: | Journal article |
| Source: | 2019 34TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2019); v. N/A, p. 4-pg., 2019-01-01. |
| Abstract | |
This work addresses the effects of Total Ionizing Dose (TID) on a Gallium Nitride (GaN) transistor before, during and after exposing to radiation, and also the comparison between biasing or not, during radiation exposition. These High Electron Mobility Transistors (HEMTs) were exposed to 10-keV X-rays effective energy and tested in a controlled temperature environment. Radiation doses varied in a wide range up to 350 krad. The results show that the devices analyzed, the commercial off-the-shelf (COTs) GaN - GS61008T, suffer few effects of ionizing radiation, and recover their electrical characteristics, especially when in on-state mode, indicating they are good candidates for use in harsh environments. (AU) | |
| FAPESP's process: | 12/03383-5 - Development of methodology for radiation tests on electronic components |
| Grantee: | Nilberto Heder Medina |
| Support Opportunities: | Regular Research Grants |