| Full text | |
| Author(s): |
Mori, C. A. B.
;
Agopian, P. G. D.
;
Martino, J. A.
;
IEEE
Total Authors: 4
|
| Document type: | Journal article |
| Source: | 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 3-pg., 2019-01-01. |
| Abstract | |
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect. (AU) | |
| FAPESP's process: | 17/26489-7 - Project and fabrication of a BE SOI Tunnel-FET as biosensitive element |
| Grantee: | Carlos Augusto Bergfeld Mori |
| Support Opportunities: | Scholarships in Brazil - Doctorate |