| Author(s): |
Watanabe, Marcos Norio
;
Chiappim Junior, William
;
Christiano, Veronica
;
Izumi, Fabio
;
dos Santos Filho, Sebastiao Gomes
;
IEEE
Total Authors: 6
|
| Document type: | Journal article |
| Source: | 2018 33RD SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO); v. N/A, p. 4-pg., 2018-01-01. |
| Abstract | |
This paper discusses the metal-oxidesemiconductor (MOS) solar cells for energy harvesting applications using Al(200nm)/SiO2(1.73nm)/Si-p and Al(200nm)/Mg(30nm)/SiO2(1.73nm)/Si-p structures. P-type (100) silicon wafers with resistivity of 10 Omega.cm were used. The gate oxide was obtained by rapid thermal processing (RTP) and the main parameters studied were extracted by means of electric characterization through IxV curves of the MOS solar cells with areas of 3.24 cm(2). A different behavior compared to the cells in literature was observed with lower fill factor (similar to 30% against similar to 85%) attributed to the MOS solar cells under the effect of series resistance (similar to 12 Omega) and low dark current density (similar to 0.1 mu A/cm(2)), which determined reproducible electrical characteristics for energy harvesting in indoor environments with conversion efficiencies up to 12.8% and generated power up to 1mW/cm(2). (AU) | |
| FAPESP's process: | 16/17826-7 - Fabrication of MOS solar cells using structures Al/TiO2/SiO2/Si |
| Grantee: | William Chiappim Junior |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |