| Full text | |
| Author(s): |
Almeida, G. F. B.
;
Nolasco, L. K.
;
Barbosa, G. R.
;
Schneider, A.
;
Jaros, A.
;
Clavero, I. Manglano
;
Margenfeld, C.
;
Waag, A.
;
Voss, T.
;
Mendonca, C. R.
Total Authors: 10
|
| Document type: | Journal article |
| Source: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS; v. 30, n. 18, p. 6-pg., 2019-09-01. |
| Abstract | |
We studied the evolution of the incubation effect during fs-laser micromachining of gallium nitride films with the number of laser pulses applied per sample surface area. The damage threshold fluence was measured using the zero-damage method and reduced from (0.61 +/- 0.01) J/cm(2) to (0.05 +/- 0.03) J/cm(2) when increasing the number of applied laser pulses from single-shot excitation to 10(5) pulses per spot, respectively. By applying the exponential defect accumulation model to the experimental incubation data, we determined a small value for the incubation parameter of (0.011 +/- 0.001), indicating that gallium nitride has slow incubation dynamics. This information is important to achieve the desired control and high efficiency of fs-laser processing of gallium-nitride-based samples. (AU) | |
| FAPESP's process: | 18/11283-7 - Nonlinear photonics: spectroscopy and advanced processing of materials |
| Grantee: | Cleber Renato Mendonça |
| Support Opportunities: | Research Projects - Thematic Grants |