Atomically Precise Bottom-Up Synthesis of h-BNC: Graphene Doped with h-BN Nanoclusters

Author(s)

Herrera-Reinoza, Nataly ; dos Santos, Alisson Ceccatto ; de Lima, Luis Henrique ; Landers, Richard ; de Siervo, Abner

• Document type: Journal article
• Source: CHEMISTRY OF MATERIALS; v. 33, n. 8, p. 12-pg., 2021-03-24.

Abstract

Monolayer hexagonal boron-nitrogen-carbon (h-BNC) is considered a prominent candidate for the next generation of semiconductor electronic devices. Nevertheless, experimental evidence of h-BNC formation is limited, including a detailed study of its morphological and electronic properties. Here, successful growth of h-BNC from an unexplored single molecular precursor (hexamethyl borazine, C6H18B3N3) using a conventional CVD approach on Ir(111) is reported. The conformation structure of the monolayer and its correlation with the local electronic properties are discussed based on scanning tunneling microscopy/spectroscopy (STM/STS) and X-ray photoelectron spectroscopy (XPS) results. The results show an h-BNC structure that can be described as BN-doped graphene since the moire ' lattice parameter is preserved along with the alloy. This BN-doped cluster, renamed as h-BN "nanodonuts" according to the electronic density exhibited in STM images, have a tendency to place specific positions within the moire superstructure, and it is constituted by at least (BN)(8) units arranged in a 6-fold BN rings conformation, as evidenced by simulation of STM images based on density functional theory (DFT). For a BN concentration of about 17%, a band gap between 1.4 and 1.6 eV was determined. The versatility of the novel molecular precursor is proven by the growth of a high-quality h-BN monolayer on Rh(111). (AU)

• FAPESP's process: 07/08244-5 - Study of the magnetic properties of Pd and PdAu ultrathin films and nanoparticles by using XMCD
• Grantee: Abner de Siervo
• Support Opportunities: Regular Research Grants
• FAPESP's process: 16/21402-8 - Growth and characterization of two-dimensional heterostructures: transition metal dichalcogenides on graphene and hexagonal boron nitride
• Grantee: Luis Henrique de Lima
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• FAPESP's process: 07/54829-5 - Electronic and geometric structure of nano-materials: synchrotron radiation studies
• Grantee: Richard Landers
• Support Opportunities: Research Projects - Thematic Grants