Impact of Ionizing Radiation and Temperature on the Performance of pMOSFETs with Different Layouts

Author(s)

Grandesi, Guilherme Inacio ; Garcia, Paulo R., Jr. ; Boas, Alexis, V ; Giacomini, Renato ; Seixas, L. E. ; Guazzelli, Marcilei A.

• Document type: Journal article
• Source: 2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024; v. N/A, p. 4-pg., 2024-01-01.

Abstract

This study investigates whether there is a difference in behavior between different layouts of MOSFET transistors, ELT and Rectangular, in terms of their functionalities at different temperatures, reflecting the effects of exposure to ionizing radiation and the bias mode as it was irradiated. The analysis focuses on the subthreshold slope and ION/IOFF ratio, among other parameters, to evaluate device robustness. This study highlights the importance of layout design in enhancing the radiation resilience of semiconductor devices. (AU)

• FAPESP's process: 22/09131-0 - Total Ionizing Dose Effect on PMOS Power Transistors
• Grantee: Paulo Roberto Garcia Junior
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• FAPESP's process: 18/25225-9 - São Paulo Research and Analysis Center
• Grantee: Sergio Ferraz Novaes
• Support Opportunities: Special Projects
• FAPESP's process: 20/04867-2 - High energy physics and instrumentation with the LHC-CERN
• Grantee: Marcelo Gameiro Munhoz
• Support Opportunities: Special Projects