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Insights into the Morphology and Structural Defects of Eu-Doped Ceria Nanostructures for Optoelectronic Applications in Red-Emitting Devices

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Author(s):
Ortega, Pedro Paulo ; Amoresi, Rafael Aparecido Ciola ; Teodoro, Marcio Daldin ; Merizio, Leonnam Gotardo ; Ramirez, Miguel Angel ; Aldao, Celso Manuel ; Malagu, Cesare ; Ponce, Miguel Adolfo ; Longo, Elson ; Simors, Alexandre Zirpoli
Total Authors: 10
Document type: Journal article
Source: ACS APPLIED NANO MATERIALS; v. 7, n. 11, p. 14-pg., 2024-05-22.
Abstract

In this work, we investigated the synthesis temperature effect on the crystal growth of Eu-doped ceria nanostructures synthesized via the microwave-assisted hydrothermal method and how it influences their red-light emission. Sphere-like nanoparticles, nanorods, nanorods/nanocubes, and nanocubes were obtained by gradually increasing the synthesis temperature. The structural analysis revealed that the nanocubes displayed higher crystallinity and lower structural disorder in comparison to the other morphologies. X-ray photoelectron spectroscopy (XPS) spectroscopy showed that oxygen vacancies were the predominant defect. The intensity of the photoluminescence emissions of the nanocubes was 60 times higher than that of the sphere-like nanoparticles and nanorods, indicating that the structural symmetry in this morphology is suitable for doping with Eu3+, displaying greater photoluminescence efficiency. The nanocubes also displayed excellent red-light emission, with coordinates (0.63,0.37) close to the red RGB primary at (0.64, 0.32). The lifetime values increased with higher synthesis temperatures. This trend suggests a structural correlation of different morphologies, defects, and homogeneity of the Eu3+ distribution in the crystal lattice and the photoluminescence emission and quenching. Therefore, we showed that controlling the morphology of Eu-doped CeO2 nanostructures is a powerful tool to improve its photoluminescence properties, which is valuable for applications as a red phosphor. (AU)

FAPESP's process: 23/07486-8 - Surface modification of nanostructured semiconductors via irradiation with femtosecond laser and electron beam aiming gas sensor applications
Grantee:Pedro Paulo da Silva Ortega
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 19/21770-5 - Luminescent materials incorporated to glasses: new composites for application in safety lighting and radiation detection
Grantee:Leonnam Gotardo Merizio
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 18/26550-0 - Study of the conduction mechanisms and interface defects in non-stoichiometric semiconductors with different morphologies
Grantee:Pedro Paulo da Silva Ortega
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 21/10780-0 - Screen-printed Eu-doped ceria films and their gas sensing characterization for the selective detection of carbon monoxide
Grantee:Pedro Paulo da Silva Ortega
Support Opportunities: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 17/19143-7 - An experimental theoretical approach of conduction mechanisms and interface defects of heterostructure sensors based on P-N and N-N semiconductors from CeO2 matrices
Grantee:Rafael Aparecido Ciola Amoresi
Support Opportunities: Scholarships in Brazil - Post-Doctoral