Ionizing Radiation Hardness Characterization of GaN HEMTs Depends on the Radiation Source

Author(s):Show less -

Boas, A. C. V. ; Alberton, S. G. ; Medina, N. H. ; Aguiar, V. A. P. ; Melo, M. A. A. ; Santos, R. B. B. ; Giacomini, R. C. ; Cavalcante, T. V. ; Seixas, L. E. ; Finco, S. ; Palomo, F. R. ; Guazzelli, M. A.

• Document type: Journal article
• Source: 2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS; v. N/A, p. 4-pg., 2022-01-01.

Abstract

This work presents a radiation effects comparison in a COTS GaN HEMT observed when this transistor is irradiated with a 10 keV X-ray and a 1.25 MeV.-ray electromagnetic radiation. The results indicate that these two sources may affect this device differently. (AU)

• FAPESP's process: 19/07767-1 - Nuclear reactions with weakly-bound or cluster-structured radioactive and stable nuclei
• Grantee: Leandro Romero Gasques
• Support Opportunities: Research Projects - Thematic Grants
• FAPESP's process: 17/18181-2 - Study of the effects of ionizing radiation in a rectifying circuit
• Grantee: Alexis Cristiano Vilas Bôas
• Support Opportunities: Scholarships in Brazil - Scientific Initiation