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Lingering times at resonance: The case of Sb-based tunneling devices

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Author(s):
Castro, E. D. Guarin ; Pfenning, A. ; Hartmann, F. ; Naranjo, A. ; Knebl, G. ; Teodoro, M. D. ; Marques, G. E. ; Hoefling, S. ; Bastard, G. ; Lopez-Richard, V.
Total Authors: 10
Document type: Journal article
Source: PHYSICAL REVIEW APPLIED; v. 23, n. 1, p. 12-pg., 2025-01-23.
Abstract

Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when charge carrier fluxes are induced. This paper highlights the role of stoichiometry not only for the quantitative tuning of the electron-hole dynamics, but also for significant qualitative contrasts of time-resolved optical responses during the operation of resonant tunneling devices. Therefore, similar device architectures and different compositions have been compared to elucidate the correlation among structural parameters, radiative recombination processes, and electron-hole pair and minority-carrier relaxation mechanisms. When these ingredients intermix with the electronic structure in Sb-based tunneling devices, it is proven possible to assess various time scales according to the intensity of the current flux, contrary to what has been observed in As-based tunneling devices with similar design and transport characteristics. These time scales are strongly affected by the filling process in the P and L states in Sb-based double-barrier quantum wells and by the small separation between these states, compared to similar heterostructures based on As. (AU)

FAPESP's process: 14/07375-2 - Multi-user equipment approved in grant 2013/18719-1: time resolved measurement system
Grantee:Marcio Daldin Teodoro
Support Opportunities: Multi-user Equipment Program
FAPESP's process: 14/02112-3 - Optical and transport phenomena in nano-devices
Grantee:Victor Lopez Richard
Support Opportunities: Regular Research Grants
FAPESP's process: 14/19142-2 - Characterization and processing of semiconductor nanostructures and application as devices
Grantee:Gilmar Eugenio Marques
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 13/18719-1 - Electronic carriers dynamics in semiconductor nanostructures
Grantee:Marcio Daldin Teodoro
Support Opportunities: Research Grants - Young Investigators Grants
FAPESP's process: 18/01914-0 - Functionalizing the optical emission in quantum tunneling nanostructures in different spectral intervals
Grantee:Marcio Daldin Teodoro
Support Opportunities: Regular Research Grants
FAPESP's process: 22/10340-2 - Scientific MUE: acquisition of a high temporal, spatial and spectral resolution fluorescence system operating over a wide temperature range
Grantee:Gilmar Eugenio Marques
Support Opportunities: Research Infrastructure Program - Scientific
FAPESP's process: 15/13771-0 - Multi-User Equipment approved in grant 14/19142-2: ultra-low vibration cryostat with magnetic field and confocal microscope
Grantee:Gilmar Eugenio Marques
Support Opportunities: Multi-user Equipment Program